The EPC2366 40 V eGaN® FET sets new benchmarks in performance, efficiency, and power density for next-generation power ...
Abstract: This work investigates the variability effects in CMOS circuits under ionizing radiation stress. We studied two types of delay cells embedded in ring oscillators (ROSCs): a basic CMOS ...
Add Yahoo as a preferred source to see more of our stories on Google. MIT engineers have developed a magnetic transistor that could pave the way for smaller, faster, and more efficient electronics. By ...
ROHM Semiconductor’s AW2K21 consists of a pair of 30-V N-channel power MOSFETs, configured in a common-source configuration that delivers an on-resistance of just 2.0 mΩ (typ.) in a compact 2.0- × 2.0 ...
The FinFET three-dimensional transistor architecture has become fundamental to modern semiconductor manufacturing. FinFET (Fin Field-Effect Transistor) represents a revolutionary advancement in ...
A new MOSFET providing precise voltage and leakage current balancing is ready to serve supercapacitors ranging from 2.8 V to 3.3 V. ALD910030 uses virtually no power for cell balancing and facilitates ...
Infineon Technologies AG addresses this challenge by announcing the high-performance gallium nitride CoolGaN G3 Transistor 100 V in RQFN 5×6 package (IGD015S10S1) and 80 V in RQFN 3.3×3.3 package ...
The Cybertruck officially became Tesla's most recalled model in 2024, with the sixth recall issued to replace a faulty drive unit inverter. Like most of those before it, this can't be solved with a ...
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