Abstract: The capacitance of the gate oxide is a crucial parameter to model the performance of MOSFETs. The traditional expression used to compute it stems from the parallel-plate capacitor formula.

It is determined by the electrical charge, which is symbolized by the letter Q, and is measured in units of coulombs. Discover how capacitance interacts with other electrical quantities and gain a ...

Capacitive sensors are found in a wide range of equipment, from consumer electronics to industrial/process control. Touch buttons are increasingly found in lamps and dimmers. Motion detectors can ...

In back-end semiconductor processing it is important to improve the performance of semiconductors due to the limitations of miniaturization in front-end processes. To achieve this goal, the industry ...

Electrostatic Potential and Capacitance Formula Sheet Class 12: In this article, students can find Class 12 Physics Chapter 2 Electrostatic Potential and Capacitance all formulas along with a PDF ...

Electrostatic Potential and Capacitance Class 12 MCQ Questions: Jagran Josh has cpecially compiled these CBSE Electrostatic Potential and Capacitance class 12 MCQ with answers from 12th grade Physics ...

LLC converters are used for linking renewable energy and smart grids. However, the output is higher than the reference caused by its own characteristics, especially in the light load, and the output ...

Merriam-Webster, the company known for its reference books and dictionaries, has become the source of online misinformation about vaccines. "Vaccine used to be defined as a substances that provides ...

Abstract: This paper proposes a controller tuning methodology for voltage-current droop-based DC-DC converters in DC microgrids to reduce the output capacitance. This minimization is cost saving and ...

This article appeared in Electronic Design and has been published here with permission. For decades, multi-layer ceramic capacitors (MLCCs) have been the go-to choice for surface-mounted capacitors ...

Leakage current has been a leading cause of device failure in DRAM design, starting with the 20nm technology node. Problems with leakage current in DRAM design can lead to reliability issues, even ...