Gleave Construction Outlines Safety Standards for Residential Gates

FORT WAYNE, IN - October 19, 2026 - PRESSADVANTAGE - Northeast Indiana is heading into the months when the ground ...
Military

Power gate driver IC for gallium nitride (GaN) devices in high-speed switching introduced by ROHM

KYOTO, Japan – ROHM Semiconductor in Kyoto, Japan, is introducing the BD2311NVX-LB gate driver IC for gallium nitride (GaN) devices in high-speed switching. The device achieves gate drive speeds of ...
Military

MOSFET and IGBT gate driver for power electronics uses in industrial applications introduced by Littlefuse

CHICAGO – Littelfuse Inc. in Chicago is introducing the IX4352NE Low-side SiC MOSFET and IGBT gate driver for on-board and off-board chargers; power factor correction (PFC); DC/DC converters; motor ...

What is E-Gate's business? I looked into everything from solar power plant development and sales to storage batteries!

When you hear the term "solar power company," don't you imagine a business that sells solar panels or installs them on ...
Electronic Design

Gate Drivers Engineered for New Era in Power Electronics

Change never comes easy in the world of power electronics. To achieve higher power densities, the latest 3.3 kW switched-mode power supplies (SMPS) are adopting silicon-carbide (SiC) power MOSFETs in ...
Electronic Design

Gate Drivers Keep Up with GaN’s Fast Switching Speed

Check out our coverage of APEC 2024. This article is part of the TechXchange: Gallium Nitride (GaN). The GaN FET is becoming widely preferred in power systems such as high-frequency DC-DC converters.