An advanced gate design could reshape EV and data center power systems.

Researchers at the Indian Institute of Science (IISc) have uncovered fundamental insights into designing gallium nitride (GaN ...

EPC's GaN Technology Strengthens Renesas' Market Presence in High-Volume Consumer and AI Power. Together, EPC and ...

Efficient Power Conversion (EPC) has entered into a strategic agreement with Renesas Electronics that will see the ...

ESPOO, Finland, May 1, 2025 /PRNewswire/ -- Beneq announces that its Transform ALD cluster tool has been qualified for volume production of GaN-based power devices on 8'' GaN-on-Si wafers by a Tier 1 ...

DUBLIN--(BUSINESS WIRE)--The "GaN Power Devices - Global Strategic Business Report" has been added to ResearchAndMarkets.com's offering. The global market for GaN Power Devices was estimated at US$346 ...

A gate design cuts leakage, raises threshold voltage, and improves stability in GaN power devices, clearing a barrier to wider use in power systems.

The collaboration merges ROHM’s device development expertise with TSMC’s advanced GaN-on-silicon technology. Credit: ROHM/Globenewswire. ROHM has entered a strategic partnership with Taiwan ...

GaN switches promise higher efficiency and higher power density in SMPS. This article discusses the readiness of this technology and its challenges, and provides an outlook on being a replacement for ...

KIYOSU, Japan--(BUSINESS WIRE)--Toyoda Gosei’s (TOKYO:7282) technology to enhance GaN substrates has been verified to improve power device performance. An article confirming it was published in ...

Wide bandgap semiconductors have taken both power electronics and high frequency circuits by storm, replacing so many applications that were previously dominated by silicon-based devices, e.g., LDMOS ...